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PD - 91273C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.40 0.40 0.40 0.40
IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614
RAD-Hard HEXFET TECHNOLOGY
TM (R)
ID QPL Part Number 9.4A JANSR2N7381 9.4A JANSF227381 9.4A JANSG2N7381 9.4A JANSH2N7381
TO-257AA
International Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET(R)
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 9.4 6.0 37 75 0.6 20 150 5.5 7.5 16 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s) 7.0 (Typical )
g
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1
12/17/01
IRHY7230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- -- 2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.23 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.40 0.49 4.0 -- 25 250 100 -100 50 10 25 35 75 70 60 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID =6.0A VGS = 12V, ID = 9.4A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 6.0A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =9.4A VDS = 100V VDD = 100V, ID =9.4A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
C iss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1200 250 63
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 9.4 37 1.4 460 2.4
Test Conditions
A
V nS C Tj = 25C, IS = 9.4A, VGS = 0V Tj = 25C, IF = 9.4A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHY7230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage
100 K Rads(Si)1
300 - 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =6.0A VGS = 12V, ID =6.0A VGS = 0V, IS = 9.4A
Min 200 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.40 0.40 1.4
Min 200 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 25 0.53 0.53 1.4
1. Part number IRHY7230CM (JANSR2N7381) 2. Part numbers IRHY3230CM, IRHY4230CM, and IRHY8230CM (JANSF2N7381, JANSG2N7381 and JANSH2N7381)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LE T MeV/(mg/cm)) 28 36.8 Energy (MeV) 285 305 Range (m) @VGS=0V Cu Br 43 39 190 100 180 100 VDS(V) @VGS=-5V @VGS=-10V @VGS=-15V 170 100 125 50 @VGS=-20V -- --
200 150 VDS 100 50 0 0 -5 -10 VGS -15 -20 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY7230CM
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
10
5.0V
5.0V
1 1
20s PULSE WIDTH T = 25 C
J 10 100
1 1
20s PULSE WIDTH T = 150 C
J 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 9.4A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
10
2.0
1.5
1.0
0.5
1 5 6 7 8
V DS = 50V 20s PULSE WIDTH 10 11 9 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHY7230CM
2000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1500
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 9.4A
16
C iss
VDS = 160V VDS = 100V VDS = 40V
12
1000
C oss
500
8
C rss
0 1 10 100
4
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
I D , Drain Current (A)
100
TJ = 150 C TJ = 25 C
10us
10
100us 1ms
1
1
10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY7230CM
Pre-Irradiation
10
VDS
8
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
-VDD
6
VGS
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY7230CM
400
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
300
ID 4.2A 5.9A BOTTOM 9.4A TOP
VD S
L
D R IV E R
RG
D .U .T
IA S
+ - VD D
200
A
VGS 20V
tp
0 .0 1
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY7230CM
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L=3.40mH Peak IL = 9.4A, VGS =12V ISD 9.4A, di/dt 660A/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527]
16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] 1 2 3
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X 3X O
0.88 [.035] 0.64 [.025] CA B
PIN AS S IGNMENT S
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
1 = DRAIN 2 = S OURCE 3 = GAT E
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01
8
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